r07ds0846ej0100rev.1.00 page 1 of 8 aug 03, 2012 preliminary datasheet rjq6003dpm 600v - 20a - igbt and diode high speed power switching features ? low collector to emitter saturation voltage v ce(sat) = 1.37 v typ. (i c = 40 a, v ge = 15 v, ta = 25c) ? built in fast recovery diode in one package ? trench gate and thin wafer technology ? high speed switching t r = 85 ns typ. (at i c = 30 a, v ce = 400 v, v ge = 15 v, rg = 5 ? , ta = 25c, inductive load) outline 1. nc 2. cathode 3. anode, collecto r 4. emitter 5. gate 1 2 3 4 5 2 5 3 4 igbt1 diode1 diode2 renesas package code: prss0005zb-a (package name: to-3pfm-5) absolute maximum ratings igbt1, diode1 (ta = 25c) item symbol ratings unit collector to emitter voltage/diode reverse voltage v ces /v r 600 v gate to emitter voltage v ges 30 v tc = 25 c i c note1 40 a collector current tc = 100 c i c note1 20 a collector peak current i c(peak) note3 160 a collector to emitter diode forward current i df note1 20 a collector to emitter diode forward peak current i df(peak) note3 100 a collector dissipation p c note2 50 w junction to case thermal impedance (igbt) ? j-c 2.5 c/w junction to case thermal impedance (diode) ? j-cd 4.5 c/w junction temperature tj 150 c storage temperature tstg ?55 to +150 c notes: 1. limited by tj max. 2. value at tc = 25c 3. pulse width limited by maximum safe operating area. r07ds0846ej0100 rev.1.00 aug 03, 2012
rjq6003dpm preliminary r07ds0846ej0100rev.1.00 page 2 of 8 aug 03, 2012 diode2 (ta = 25c) item symbol ratings unit maximum reverse voltage v rm 600 v continuous forward current i f note1 20 a peak surge forward current i fsm note4 80 a junction to case thermal impedance ? j-c 4.5 c/w junction temperature tj 150 ? c storage temperature tstg ?55 to +150 ? c notes: 4. 50 hz sine half wave, non-repetitive 1 cycle value, tj = 25 ? c. electrical characteristics igbt (ta = 25c) item symbol min typ max unit test conditions zero gate voltage collector current i ces ? ? 100 ? a v ce = 600v, v ge = 0 gate to emitter leak current i ges ? ? 1 ? a v ge = 30 v, v ce = 0 gate to emitter cutoff voltage v ge(off) 4 ? 8 v v ce = 10 v, i c = 1 ma v ce(sat) ? 1.37 1.8 v i c = 40 a, v ge = 15 v note5 collector to emitte r saturation voltage v ce(sat) ? 1.7 ? v i c = 80 a, v ge = 15 v note5 input capacitance cies ? 2780 ? pf output capacitance coes ? 122 ? pf reverse transfer capacitance cres ? 43 ? pf v ce = 25 v v ge = 0 v f = 1 mhz t d(on) ? 53 ? ns t r ? 145 ? ns t d(off) ? 105 ? ns switching time t f ? 85 ? ns i c = 30 a, v ce = 400 v, v ge = 15 v rg = 5 ? note5 inductive load notes: 5. pulse test diode1, diode2 (ta = 25c) item symbol min typ max unit test conditions forward voltage v f ? 1.4 1.9 v i f = 30 a reverse current i r ? ? 1 ? a v r = 600 v reverse recovery time t rr ? 100 ? ns frd reverse recovery charge q rr ? 0.18 ? ? c frd peak reverse recovery current i rr ? 4.2 ? a i f = 30 a di/dt = 100 a/ ? s
rjq6003dpm preliminary r07ds0846ej0100rev.1.00 page 3 of 8 aug 03, 2012 main characteristics typical output characteristics 160 120 80 40 12345 collector current i c (a) 0 0 collector to emitter voltage v ce (v) collector current i c (a) collector to emitter voltage v ce (v) 160 120 80 40 0 pulse test ta = 2 5 c pulse test ta = 2 5 c 9 v v ge = 8 v 8.5 v 9.5 v 10.5 v 15 v 13 v 10 v 11 v 1.0 2.2 1.8 1.4 2.6 3.0 6 8 10 12 14 16 20 18 collector to emitter saturation voltage vs. gate to emitter voltage (typical) collector to emitter saturation voltage v ce(sat) (v) i c = 20 a 40 a 80 a ta = 2 5 c pulse test gate to emitter voltage v ge (v) typical transfer characteristics collector current i c (a) 246810 12 v ce = 10 v pulse test gate to emitter voltage v ge (v) 25c ?25 c tc = 7 5 c maximum safe operation area 1000 100 1 10 0.1 1 100 10 1000 tc = 25 c single pulse 100 s pw = 10 s 0 6 4 2 8 10 collector to emitter saturation voltage vs. junction temparature (typical) 1.0 1.2 1.4 1.6 1.8 2.0 2.2 ? 25 0 25 75 125 50 100 150 collector to emitter saturation voltage v ce(sat) (v) v ge = 15 v pulse test junction temparature tj ( c) 40 a 20 a i c = 80 a gate to emitter cutoff voltage vs. junction temparature (typical) ? 25 0 25 75 125 50 100 150 gate to emitter cutoff voltage v ge(off) (v) v ce = 10 v pulse test junction temparature tj ( c) 1 ma i c = 10 ma
rjq6003dpm preliminary r07ds0846ej0100rev.1.00 page 4 of 8 aug 03, 2012 capacitance c (pf) 10 100 1000 10000 0 100 50 150 200 250 300 cies coes cres gate charge qg (nc) dynamic input characteristics (typical) typical capacitance vs. collector to emitter voltage 800 600 400 200 0 0 16 12 8 4 0 20 40 60 80 100 i c = 40 a ta = 25 c v ge v ce v cc = 600 v 300 v v ge = 0 v f = 1 mhz ta = 25 c collector to emitter voltage v ce (v) collector to emitter voltage v ce (v) gate to emitter voltage v ge (v) v cc = 300 v 600 v diode forward current i f (a) 0 20 40 60 80 100 0123 4 v ge = 0 v ta = 25 c pulse test c-e diode forward voltage v cef (v) forward current vs. forward voltage (typical)
rjq6003dpm preliminary r07ds0846ej0100rev.1.00 page 5 of 8 aug 03, 2012 800 400 1600 1200 0 150 100 50 300 250 200 0 110 200 100 collector current i c (a) (inductive load) 050 25 150 75 125 100 50 25 150 75 125 100 switching characteristics (typical) (3) 100 1000 10 t d(off) t d(on) t r t f junction temperature tj (c) (inductive load) junction temperature tj (c) (inductive load) switching characteristics (typical) (4) eoff eon swithing energy losses e ( j) switching times t (ns) 110 200 100 10 1000 100 100000 10000 swithing energy losses e ( j) collector current i c (a) (inductive load) eoff eon switching characteristics (typical) (1) switching characteristics (typical) (2) switching times t (ns) v cc = 400 v, v ge = 15 v rg = 5 , tj = 150 c t r includes the diode recovery v cc = 400 v, v ge = 15 v rg = 5 , tj = 150 c eon includes the diode recovery v cc = 400 v, v ge = 15 v i c = 30 a, rg = 5 eon includes the diode recovery v cc = 400 v, v ge = 15 v i c = 30 a, rg = 5 t r includes the diode recovery t d(off) t d(on) t f t r
rjq6003dpm preliminary r07ds0846ej0100rev.1.00 page 6 of 8 aug 03, 2012 pulse width pw (s) normalized transient thermal impedance s (t) normalized transient thermal impedance vs. pulse width (igbt) pulse width pw (s) normalized transient thermal impedance s (t) normalized transient thermal impedance vs. pulse width (diode) 0.01 0.1 10 1 100 1 m 10 m 100 m 1 10 100 100 1 m 10 m 100 m 1 10 100 p dm pw t d = pw t j ? c(t) = s (t) ? j ? c j ? c = 2.5 c/w, tc = 25 c tc = 25 c 0.01 1 0.1 10 p dm pw t d = pw t j ? c(t) = s (t) ? j ? c j ? c = 4.5 c/w, tc = 25 c 0.05 0.2 0.1 0.5 d = 1 tc = 25 c 0.01 0.02 1 shot pulse 0.05 0.2 0.1 0.5 d = 1 0.02 1 shot pulse 0.01
rjq6003dpm preliminary r07ds0846ej0100rev.1.00 page 7 of 8 aug 03, 2012 switching time test circuit diode reverse recovery time test circuit waveform d.u.t v cc t rr i rr di f /dt 0.9 i rr i f i f rg 0.5 i rr l 0 waveform diode clamp d.u.t rg l v cc t d(off) t off t on t d(on) t f t r t tail 90% 90% 90% 10% 10% 10% 10% 1% v ge i c v ce
rjq6003dpm preliminary r07ds0846ej0100rev.1.00 page 8 of 8 aug 03, 2012 package dimensions prev i ous code prss0005zb - a t o - 3p f m - 5 mass [t yp .] 5 . 3g sc - 93 un i t : mm 2 . 725 19 . 7 0 . 519 . 9 0 . 3 5 . 0 0 . 3 2 . 0 0 . 3 5 . 5 0 . 3 3 . 2 0 . 3 3 . 2 15 . 6 0 . 3 + 0 .4 ? 0 . 2 1 .4 0 0 . 86 2 . 25 0 . 3 5 . 0 0 . 3 0 . 66 + 0 . 2 ? 0 . 1 2 . 725 0 . 9 + 0 . 2 ? 0 . 1 r ene sas code j eit a package code package n ame t o - 3p f m - 5 ordering information orderable part number quan tity shipping container rjq6003dpm-00#t0 360 pcs box (tube)
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